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氮化铝陶瓷产品
Aluminum Nitride Ceramic
产品介绍
Performance Introduction
氮化铝(AlN)陶瓷兼具高导热、高绝缘、热膨胀匹配三大核心特性,是功率电子与先进散热领域的优选材料。AlN陶瓷的散热能力是氧化铝(Al2O3)的5倍以上,并保持陶瓷优异的电绝缘性;AlN陶瓷无毒性、安全环保,更易加工。AlN陶瓷与硅、碳化硅、氮化镓等主流半导体芯片热膨胀匹配良好,可显著降低封装热失配应力。AlN陶瓷的力学强度和化学稳定性出色,适合严苛服役环境。
Aluminum nitride (AlN) ceramics combine three key properties: high thermal conductivity, high electrical insulation, and thermal expansion compatibility, making them the preferred material in power electronics and advanced thermal management applications. The heat dissipation capability of AlN ceramics is more than five times that of alumina (Al2O3), while maintaining excellent electrical insulation. They are non-toxic, safe, environmentally friendly, and easier to process. They exhibit good thermal expansion compatibility with mainstream semiconductor chips such as silicon, silicon carbide, and gallium nitride, significantly reducing thermal mismatch stress in packaging. AlN ceramics also feature excellent mechanical strength and chemical stability, making them suitable for demanding service environments.
产品规格
Product Specifications
|
最大尺寸 (mm) Maximum dimensions |
厚度 (mm) Thickness |
|---|---|
| Ø300 | 1 ~ 10 |
性能特点
Performance Characteristics
应用场景
Applications
性能指标
Typical property parameters
| 项目 | 指标 | |
|---|---|---|
|
密度 (g/cm³) Density |
3.3 | |
|
维氏硬度 (GPa) Vickers hardness |
10.2 ~ 11.2 | |
|
抗弯强度 (MPa) Flexural strength |
310 ~ 420 | |
|
杨氏模量 (GPa) Young's modulus |
310 ~ 330 | |
|
热膨胀系数(@40-800°C)×10⁻6/°C Thermal expansion coefficient |
5.3 | |
|
热导率(@20°C)W/(m·K) Thermal conductivity |
202 | |
|
比热容 J/(g·K) Specific heat capacity |
0.71 | |
|
介电强度 (kV/mm) Dielectric strength |
40 | |
|
光学折射率 (Ω·cm)
Volume electrical resistivity
|
@20°C | > 1014 |
| @300°C | 1010 | |
| @500°C | 109 | |
|
介电常数(@1 MHz) Dielectric constant |
8.8 | |
|
介电损耗(@1 MHz)×10⁻⁴ Dielectric loss |
3 ~ 5 | |
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